Tools
Tools
Hu, J, Hajto, Janos, Snell, A J and Rose, M J (2001) Electron transport in metal-amorphous silicon-metal memory devices. IEICE Transactions on Electronics, E84-C (9). pp. 1197-1201. ISSN 09168524
Full text not available from this repository.Abstract/Description
Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon-V (Cr/p+a-Si:H/V) analogue memory switching devices have been measured over a wide range of device resistance from several kilo-ohms to several hundred kilo-ohms, and over a temperature range from 13 K to 300 K. Both the bias and temperature dependence of the conductance show similar characteristics to that of metal-insulator heterogeneous materials (i.e. discontinuous or granular metallic films), which are analysed in terms of activated tunnelling mechanism. A modified filamentary structure for the Cr/p+a-Si:H/V switching devices is proposed. The influence of embedded metallic particles on memory switching is analysed and discussed.
| Item Type: | Article |
|---|---|
| Print ISSN: | 09168524 |
| Uncontrolled Keywords: | Amorphous semiconductors; Elemental semiconductors; Metal-semiconductor-metal structures; Semiconductor storage; Semiconductor switches; Silicon; Tunnelling; Memory switching devices; |
| University Divisions/Research Centres: | Faculty of Engineering, Computing and Creative Industries > School of Engineering and the Built Environment |
| Dewey Decimal Subjects: | 600 Technology > 620 Engineering > 621 Electronic & mechanical engineering |
| Library of Congress Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Item ID: | 1947 |
| Depositing User: | RAE Import |
| Date Deposited: | 09 Jun 2008 16:31 |
| Last Modified: | 07 Jul 2010 11:10 |
| URI: | http://researchrepository.napier.ac.uk/id/eprint/1947 |
Actions (login required)
| View Item |