Hu, J, Hajto, Janos, Snell, A J and Rose, M J (2001) Electron transport in metal-amorphous silicon-metal memory devices. IEICE Transactions on Electronics, E84-C (9). pp. 1197-1201. ISSN 09168524Full text not available from this repository.
Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon-V (Cr/p+a-Si:H/V) analogue memory switching devices have been measured over a wide range of device resistance from several kilo-ohms to several hundred kilo-ohms, and over a temperature range from 13 K to 300 K. Both the bias and temperature dependence of the conductance show similar characteristics to that of metal-insulator heterogeneous materials (i.e. discontinuous or granular metallic films), which are analysed in terms of activated tunnelling mechanism. A modified filamentary structure for the Cr/p+a-Si:H/V switching devices is proposed. The influence of embedded metallic particles on memory switching is analysed and discussed.
|Uncontrolled Keywords:||Amorphous semiconductors; Elemental semiconductors; Metal-semiconductor-metal structures; Semiconductor storage; Semiconductor switches; Silicon; Tunnelling; Memory switching devices;|
|University Divisions/Research Centres:||Faculty of Engineering, Computing and Creative Industries > School of Engineering and the Built Environment|
|Dewey Decimal Subjects:||600 Technology > 620 Engineering > 621 Electronic & mechanical engineering|
|Library of Congress Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Depositing User:||RAE Import|
|Date Deposited:||09 Jun 2008 15:31|
|Last Modified:||07 Jul 2010 10:10|
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