Electron transport in metal-amorphous silicon-metal memory devices.

Hu, J, Hajto, Janos, Snell, A J and Rose, M J (2001) Electron transport in metal-amorphous silicon-metal memory devices. IEICE Transactions on Electronics, E84-C (9). pp. 1197-1201. ISSN 09168524

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Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon-V (Cr/p+a-Si:H/V) analogue memory switching devices have been measured over a wide range of device resistance from several kilo-ohms to several hundred kilo-ohms, and over a temperature range from 13 K to 300 K. Both the bias and temperature dependence of the conductance show similar characteristics to that of metal-insulator heterogeneous materials (i.e. discontinuous or granular metallic films), which are analysed in terms of activated tunnelling mechanism. A modified filamentary structure for the Cr/p+a-Si:H/V switching devices is proposed. The influence of embedded metallic particles on memory switching is analysed and discussed.

Item Type: Article
Print ISSN: 09168524
Uncontrolled Keywords: Amorphous semiconductors; Elemental semiconductors; Metal-semiconductor-metal structures; Semiconductor storage; Semiconductor switches; Silicon; Tunnelling; Memory switching devices;
University Divisions/Research Centres: Faculty of Engineering, Computing and Creative Industries > School of Engineering and the Built Environment
Dewey Decimal Subjects: 600 Technology > 620 Engineering > 621 Electronic & mechanical engineering
Library of Congress Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Item ID: 1947
Depositing User: RAE Import
Date Deposited: 09 Jun 2008 15:31
Last Modified: 07 Jul 2010 10:10

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